Defects and Diffusion in Semiconductors VI (Defect and Diffusion Forum)

Defects and Diffusion in Semiconductors VI (Defect and Diffusion Forum)

  • ただいまウェブストアではご注文を受け付けておりません。 ⇒古書を探す
  • 製本 Paperback:紙装版/ペーパーバック版／ページ数 458 p.
  • 言語 ENG
  • 商品コード 9783908450832
  • DDC分類 621.38152

Full Description

This volume of the annual series contains nearly 800 selected abstracts of recent research in the semiconductor field: dating up to about September 2003 (depending upon individual source publication dates).

Contents

Stable Hydrogen Pair Trapped at Carbon Impurities in Silicon
New Approach to Capacitance Studies of 'DX' Centers
Diodes Fabricated by Electron Beam Doping (Superdiffusion)Technique in Semiconductors at Room Temperature
Modeling of Dopant and Defect Interactions in Si Process Simulators
Spectroscopic Study of Magnesium-Related Impurities in Silicon
Makyoh Topography: A Simple Yet Powerful Optical Method for Surface Flatness and Defect Characterisation
Electron Diffraction of 3-D Defects in Nanostructural II-VI Semiconductors
A Finite Difference Calculation of Impurity Migration in Semiconductors by the Kick-Out Mechanism
In-Diffusion Concentration Profiles of Dopants in Semiconductors
Recent Advances in the Measurement of Interstitial Oxygen in Silicon by Infra-Red Spectroscopy
Algorithm Animation for Superdiffusion of a Non-Equilibrium in Semiconductors