Electronic Properties of Semiconductor Interfaces (Springer Series in Surface Sciences Vol.43) (2004. XI, 261 p. w. 143 figs.)

Electronic Properties of Semiconductor Interfaces (Springer Series in Surface Sciences Vol.43) (2004. XI, 261 p. w. 143 figs.)

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  • 製本 Hardcover:ハードカバー版/ページ数 261 p.
  • 商品コード 9783540202158

Full Description

Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.

Contents

Introduction.- Depletion Layer.- Determination of Barrier Heights and Offsets.- Laterally Inhomogeneous Schottky Contacts.- The IFIGS-and-Electronegativity Theory.- The MIGS-and-Electronegativity Concept: Experiment and Theory.- First-Principles Calculations of Barrier Heights and Valence-Band Offsets.- Temperature and Pressure Effects.- Barrier Heights and Extrinsic Interface Defects.- Extrinsic Interface Dipoles.- Ohmic Contacts.