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基本説明
Reviews profound technical and policy implications of spin-based devices for the future of semiconductor electronics, non-volatile computer memory, nanotechnology, and quantum computing and communications.
Full Description
The history of scientific research and technological development is replete with examples of breakthroughs that have advanced the frontiers of knowledge, but seldom does it record events that constitute paradigm shifts in broad areas of intellectual pursuit. One notable exception, however, is that of spin electronics (also called spintronics, magnetoelectronics or magnetronics), wherein information is carried by electron spin in addition to, or in place of, electron charge. It is now well established in scientific and engineering communities that Moore's Law, having been an excellent predictor of integrated circuit density and computer performance since the 1970s, now faces great challenges as the scale of electronic devices has been reduced to the level where quantum effects become significant factors in device operation. Electron spin is one such effect that offers the opportunity to continue the gains predicted by Moore's Law, by taking advantage of the confluence of magnetics and semiconductor electronics in the newly emerging discipline of spin electronics. From a fundamental viewpoine, spin-polarization transport in a material occurs when there is an imbalance of spin populations at the Fermi energy. In ferromagnetic metals this imbalance results from a shift in the energy states available to spin-up and spin-down electrons. In practical applications, a ferromagnetic metal may be used as a source of spin-polarized electronics to be injected into a semiconductor, a superconductor or a normal metal, or to tunnel through an insulating barrier.
Contents
1. Spin Electronics—Is It the Technology of the Future?.- 2. Materials for Semiconductor Spin Electronics.- 3. Fabrication and Characterization of Magnetic Nanostructures.- 4. Spin Injection, Spin Transport and Spin Transfer.- 5. Optoelectronic Manipulation of Spin in Semiconductors.- 6. Magnetoelectronic Devices.- Appendices.- A. Appendix A. Biographies of Team Members.- B. Appendix B. Site Reports—Europe.- Johannes Kepler University.- Unité Mixte de Physique CNRS/THALES.- INESC.- RWTH Aachen.- University of Hamburg.- University of Twente.- University of Basel.- University of Wuerzburg.- University of Hamburg.- IMEC.- QinetiQ.- Trinity College.- Imperial College of Science, Technology and Medicine.- University of Cambridge.- University of Cambridge.- University of Glasgow.- University of Nottingham.- University of Regensburg.- C. Appendix C. Site Reports — Japan.- University of Tokyo.- The Institute for Solid State Physics.- Tokyo Institute of Technology.- Tokyo Institute of Technology.- Waseda University.- Tokyo Univ. of Agriculture and Technology.- Kanagawa Academy of Science and Technology (KAST).- Tokyo Institute of Technology.- Fujitsu Laboratories Ltd..- NTT Basic Research Laboratory.- NEC Fundamental Research Laboratories (FRL).- Joint Research Center for Atom Technology (JRCAT).- Japan Advanced Institute of Science and Technology.- University of Tokyo, Department of Physics.- University of Tokyo, Department of Electrical Engineering.- The Institute of Scientific and Industrial Research.- Osaka University.- Tohoku University, Research Institute of Electrical Communication (RIEC).- Tohoku University, Department of Applied Physics.- Tohoku University, Department of Materials Science.- Tohoku University.- D. Appendix D. Highlights of Recent U.S. Research andDevelopment Activities.- E. Appendix E. Glossary.- F. Appendix F. Index of Sites.
