固体工学の基礎<br>Fundamentals of Solid State Engineering

固体工学の基礎
Fundamentals of Solid State Engineering

  • ただいまウェブストアではご注文を受け付けておりません。 ⇒古書を探す
  • 製本 Hardcover:ハードカバー版／ページ数 630 p.
  • 言語 ENG
  • 商品コード 9780792376293
  • DDC分類 621.381

基本説明

Addresses the basic physics concepts, which are at the base of solid state matter in general and semiconductors in particular and reviews the technology for modern Solid State Engineering.

Full Description


"Fundamentals of Solid State Engineering" is structured in two major parts. It first addresses the basic physics concepts, which are at the base of solid state matter in general and semiconductors in particular. The second part reviews the technology for modern Solid State Engineering. This includes a review of compound semiconductor bulk and epitaxial thin films growth techniques, followed by a description of current semiconductor device processing and nano-fabrication technologies. A few examples of semiconductor devices and a description of their theory of operational are then discussed, including transistors, semiconductor lasers, and photodetectors.

Contents

Preface. List of Symbols. 1Introduction. 1.2. Crystal lattices and the seven crystal systems. 1.3. The unit cell concept. 1.4. Bravais lattices. 1.5. Point groups. 1.6. Space groups. 1.7. Directions and planes in crystals: Miller indices. 1.8. Real crystal structures. 1.9. Summary. Further reading. Problems. 2: Electronic Structure of Atoms. 2.1. Introduction. 2.2. Spectroscopic emission lines and atomic structure of hydrogen. 2.3. Atomic orbitals. 2.4. Structures of atoms with many electrons. 2.5. Bonds in solids. 2.6. Introduction to energy bands. 2.7. Summary. Further reading. Problems. 3: Introduction to Quantum Mechanics. 3.1. The quantum concepts. 3.2. Elements of quantum mechanics. 3.3. Simple quantum mechanical systems. 3.4. Reciprocal lattice. 3.5. Summary. Further reading. Problems. 4: Electrons and Energy Band Structures in Crystals. 4.1. Introduction. 4.2. Electrons in a crystal. 4.3. Band structures in real semiconductors. 4.4. Band structures in metals. 4.5. Summary. References. Further reading. Problems. 5: Low Dimensional Quantum Structures. 5.1. Introduction. 5.2. Density of states (3D). 5.3. Two-dimensional structures: quantum wells. 5.4. One-dimensional structures: quantum wires. 5.5. Zero-dimensional structures: quantum dots. 5.6. Optical properties of 3D and 2D structures. 5.7. Examples of low dimensional structures. 5.8. Summary. References. Further reading. Problems. 6: Phonons. 6.1. Introduction. 6.2. Interaction of atoms in crystals: origin and formalism. 6.3. One-dimensional monoatomic harmonic crystal. 6.4. Sound velocity. 6.5. One-dimensional diatomic harmonic crystal. 6.6. Phonons. 6.7. Summary. Further reading. Problems. 7: Thermal Properties of Crystals. 7.1. Introduction. 7.2. Phonon density of states (Debye model). 7.3. Heat capacity. 7.4. Thermal expansion. 7.5. Thermal conductivity. 7.6. Summary. References. Further reading. Problems. 8: Equilibrium Charge Carrier Statistics in Semiconductors. 8.1. Introduction. 8.2. Density of states. 8.3. Effective density of states (conduction band). 8.4. Effective density of states (valence band). 8.5. Mass action law. 8.6. Doping: intrinsic vs. extrinsic semiconductor. 8.7. Charge neutrality. 8.8. Fermi energy as a function of temperature. 8.9. Carrier concentration in a semiconductor. 8.10. Summary. Further reading. Problems. 9: Non-Equilibrium Electrical Properties of Semiconductors. 9.1. Introduction. 9.2. Electrical conductivity. 9.3. Hall effect. 9.4. Charge carrier diffusion. 9.5. Quasi-Fermi energy. 9.6. Carrier generation and recombination mechanisms. 9.7. Summary. Further reading. Problems. 10: Semiconductor Junctions. 10.1. Introduction. 10.2. Ideal p-n junction at equilibrium. 10.3. Non-equilibrium properties of p-n junctions. 10.4. Deviations from the ideal p-n diode case. 10.5. Metal-semiconductor junctions. 10.6. Summary. Further reading. Problems. 11: Compound Semiconductors and Crystal Growth Techniques. 11.1. Introduction. 11.2. III-V semiconductor alloys. 11.3. Bulk single crystal growth techniques. 11.4. Epitaxial growth techniques. 11.5. Summary. References. Further reading. Problems. 12: Semiconductor Device Technology. 12.1. Introduction. 12.2. Oxidation. 12.3. Diffusion of dopants. 12.4. Ion implantation of dopants. 12.5. Characterization of diffused and implanted layers. 12.6. Summary. References. Further reading. Problems. 13: Semiconductor Device Processing. 13.1. Introduction. 13.2. Photolithography. 13.3. Electron-beam lithography. 13.4. Etching. 13.5. Metallization. 13.6. Packaging of devices. 13.7. Summary. References. Further reading. Problems. 14: Transistors. 14.1. Introduction. 14.2. Overview of amplification and switching. 14.3. Bipolar junction transistors. 14.4. Heterojunction bipolar transistors. 14.5. Field effect transistors. 14.6. Summary. References. Problems. 15: Semiconductor Lasers. 15.1. Introduction. 15.2. Types of lasers. 15.3. General laser theory. 15.4. Ruby laser. 15.5. Semiconductor lasers. 15.6. Summary. References. Further reading. Problems. 16: Photodetectors. 16.1. Introduction. 16.2. Electromagnetic radiation. 16.3. Photodetector parameters. 16.4. Thermal detectors. 16.5. Photon detectors. 16.6. Examples of photon detectors. 16.7. Summary. References. Further reading. Problems. Appendix. References. Index.