Semiconductor Device and Failure Analysis : Using Photon Emission Microscopy (Quality and Reliability Engineering Series)

個数：

Semiconductor Device and Failure Analysis : Using Photon Emission Microscopy (Quality and Reliability Engineering Series)

  • 提携先の海外書籍取次会社に在庫がございます。通常3週間で発送いたします。
    【重要ご説明事項】
    1. 納期遅延や、ご入手不能となる場合が若干ございます。
    2. 複数冊ご注文の場合、分割発送となる場合がございます。
    3. 美品のご指定は承りかねます。
  • 【入荷遅延について】
    世界情勢の影響により、海外からお取り寄せとなる洋書・洋古書の入荷が、表示している標準的な納期よりも遅延する場合がございます。
    おそれいりますが、あらかじめご了承くださいますようお願い申し上げます。
  • ◆画像の表紙や帯等は実物とは異なる場合があります。
  • ◆ウェブストアでの洋書販売価格は、弊社店舗等での販売価格とは異なります。
    また、洋書販売価格は、ご注文確定時点での日本円価格となります。
    ご注文確定後に、同じ洋書の販売価格が変動しても、それは反映されません。
  • 製本 Hardcover:ハードカバー版／ページ数 269 p.
  • 言語 ENG
  • 商品コード 9780471492405
  • DDC分類 621.38152

基本説明

Contents: Characterization Photon Emission from Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) under Hot-Carrier Stressing; Photon Emisson from MOSFETs under High-Field Impulse Stressing; and more.

Full Description

The diminishing size and greater complexity of modern semiconductor integrated circuits poses new challenges in fault detection. Photon Emission Microscopy (PEM) is a physical fault localisation technique used for analysing IC failures. Detailing the PEM technique and its application to semiconductor device analysis, this unique reference:
* Illustrates the application of the PEM technique in various areas of device reliability, in particular hot-carrier, oxide and ESD reliability.
* Presents the principles of design and calibration for a spectroscopic emission microscope system along with coverage of the three main operation modes: frontside, backside and spectroscopic PEM
* Provides an analysis of light emission in semiconductors under hot-carrier and high-field impulse stressing in MOS transistors and photon emission from biased MOS capacitors.
Not only an essential reference for researchers and students in the field, the numerous practical examples throughout the text also make this an indispensible guide for failure analysis engineers and microelectrics industry professionals.

Contents

Preface.

Introduction.

Theory of Light Emission in Semiconductors.

Instrumentation Aspects of the Photon Emission Microscope.

Backside Photon Emission Microscopy.

Spectroscopic Photon Emission Microscopy.

Photon Emission from Metal-Oxide-Semiconductor Field-Effect Transistors under Hot-Carrier Stressing.

Photon Emission from Metal-Oxide-Semiconductor Field-Effect Transistors under High-Field Impulse Stressing.

Oxide Degradation and Photon Emission from Metal-Oxide Semiconductor Capacitor Structures.

Index.