Radiation Effects in Semiconductors (Devices, Circuits, and Systems)

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Radiation Effects in Semiconductors (Devices, Circuits, and Systems)

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  • CRC Press Inc(2010/08発売)
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  • ウェブストア価格 ¥44,984(本体¥40,895)
  • CRC Press Inc(2010/08発売)
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  • 製本 Hardcover:ハードカバー版/ページ数 432 p.
  • 言語 ENG
  • 商品コード 9781439826942
  • DDC分類 621.38152

Full Description

Space applications, nuclear physics, military operations, medical imaging, and especially electronics (modern silicon processing) are obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects of this broad and complex topic, Radiation Effects in Semiconductors addresses the ever-growing need for a clear understanding of radiation effects on semiconductor devices and circuits to combat potential damage it can cause.

Features a chapter authored by renowned radiation authority Lawrence T. Clark on Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation

This book analyzes the radiation problem, focusing on the most important aspects required for comprehending the degrading effects observed in semiconductor devices, circuits, and systems when they are irradiated. It explores how radiation interacts with solid materials, providing a detailed analysis of three ways this occurs: Photoelectric effect, Compton effect, and creation of electron-positron pairs. The author explains that the probability of these three effects occurring depends on the energy of the incident photon and the atomic number of the target. The book also discusses the effects that photons can have on matter—in terms of ionization effects and nuclear displacement

Written for post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in semiconducting devices and circuits and systems—and how that damage can be avoided in areas such as military/space missions, nuclear applications, plasma damage, and X-ray-based techniques. It features top-notch international experts in industry and academia who address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches.

Contents

Section I: Devices

Radiation Damage in Silicon. Radiation-Tolerant CMOS Single-Photon Imagers for Multiradiation Detection Effects of Hydrogen on the Radiation Response of Field-Oxide. Field-Effect Transistors and High-K Dielectrics. Novel Total Dose and Heavy-Ion Charge Collection Phenomena in a New SiGe HBT on Thin-Film SOI Technology. Radiation-Hard Voltage and Current References in Standard CMOS Technologies. Nanocrystal Memories: An Evolutionary Approach to Flash Memory Scaling and a Class of Radiation-Tolerant Devices.

Section II: Circuits and Systems

Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation. A Complete Guide to Multiple Upsets in SRAMs Processed in Decananometric CMOS Technologies. Real-Time Soft Error Rate Characterization of Advanced SRAMs. Fault Tolerance Techniques and Reliability Modeling for SRAM-Based FPGAs Assuring Robust Triple Modular Redundancy Protected Circuits in SRAM-Based FPGAs. SEU/SET Tolerant Phase-Locked Loops. Autonomous Detection and Characterization of Radiation-Induced Transients in Semiconductor Integrated Circuits. Soft Errors in Digital Circuits: Overview and Protection Techniques for Digital Filters. Fault-Injection Techniques for Dependability Analysis: An Overview. Index.